Strain relaxation kinetics in Si1−xGex/Si heterostructures
作者:
R. J. Hauenstein,
B. M. Clemens,
R. H. Miles,
O. J. Marsh,
E. T. Croke,
T. C. McGill,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1989)
卷期:
Volume 7,
issue 4
页码: 767-774
ISSN:0734-211X
年代: 1989
DOI:10.1116/1.584598
出版商: American Vacuum Society
关键词: SILICON ALLOYS;GERMANIUM ALLOYS;SILICON;INTERFACES;HETEROSTRUCTURES;INTERFACE STRUCTURE;STRAINS;STRESS RELAXATION;ANNEALING;X−RAY DIFFRACTION;RAMAN SPECTROSCOPY;MOLECULAR BEAM EPITAXY;SUPERLATTICES;TEMPERATURE DEPENDENCE;MEDIUM TEMPERATURE;Si;(Ge,Si)
数据来源: AIP
摘要:
Strain relaxation in Si1−xGex/Si superlattices and alloy films is studied as a function ofexsituanneal treatment with the use of x‐ray diffraction and Raman spectroscopy. Samples are grown by molecular‐beam epitaxy at an unusually low temperature (≊365 °C). This results in metastably strained alloy and superlattice films significantly in excess of critical thicknesses previously reported for such structures. Significant strain relaxation is observed upon anneal at temperatures as low as 390 °C. After a 700 °C, 2 h anneal, superlattices are observed to relax less fully (∼43% of coherent strain) than corresponding alloys (∼84% of coherent strain). Also, the strain relaxation kinetics of a Si1−xGexalloy layer is studied quantitatively. Alloy strain relaxation is approximately described by a single, thermally activated, first order kinetic process having activation energyEa=2.0 eV. The relevance of our results to the microscopic mechanisms responsible for strain relaxation in lattice‐mismatched semiconductor heterostructures is discussed.
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