The selective removal of epitaxial Si0.7Ge0.3from {100} silicon using an aqueous based etch is reported. An etch consisting of HNO3:H2O:HF(0.5%), 40:20:5 at 22 °C, removes Si0.7Ge0.3at a rate of 207 A˚/min, and removes {100} Si at a rate of 16 A˚/min. This corresponds to a selectivity of 1321 where the selectivity is defined as the ratio of the Si0.7Ge0.3to {100} Si etch rates. This etch leaves the surface smooth and free from pitting or trenching as observed by optical microscopy. The results obtained are consistent with a germanium enhanced oxidation mechanism of the Si0.7Ge0.3alloy during semiconductor removal.