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E’centers and nitrogen‐related defects in SiO2films

 

作者: J. H. Stathis,   J. Chapple‐Sokol,   E. Tierney,   J. Batey,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 56, issue 21  

页码: 2111-2113

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103233

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have observed an electron paramagnetic resonance signal corresponding to a neutral fourfold coordinated nitrogen in plasma‐enhanced chemical vapor deposited SiO2films fabricated under certain conditions. The same films containE’centers (positive oxygen vacancies) in an equal quantity. Our data support a model in which these two paramagnetic centers are created simultaneously by an electron transfer, starting from a positive fourfold nitrogen and a neutral oxygen vacancy. This model allows an earlier observation of an apparently neutralE’variant to be interpreted as a normal positiveE’plus a nitrogen center to conserve charge.

 

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