E’centers and nitrogen‐related defects in SiO2films
作者:
J. H. Stathis,
J. Chapple‐Sokol,
E. Tierney,
J. Batey,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 21
页码: 2111-2113
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103233
出版商: AIP
数据来源: AIP
摘要:
We have observed an electron paramagnetic resonance signal corresponding to a neutral fourfold coordinated nitrogen in plasma‐enhanced chemical vapor deposited SiO2films fabricated under certain conditions. The same films containE’centers (positive oxygen vacancies) in an equal quantity. Our data support a model in which these two paramagnetic centers are created simultaneously by an electron transfer, starting from a positive fourfold nitrogen and a neutral oxygen vacancy. This model allows an earlier observation of an apparently neutralE’variant to be interpreted as a normal positiveE’plus a nitrogen center to conserve charge.
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