Copper film formation using electron cyclotron resonance plasma sputtering and reflow method
作者:
S. Shibuki,
H. Kanao,
T. Akahori,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 1
页码: 60-65
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589256
出版商: American Vacuum Society
关键词: Cu
数据来源: AIP
摘要:
A subhalf-micron gap filling process for copper (Cu) films was developed by using an electron cyclotron resonance (ECR) plasma sputtering method. The achieved Cu film had a resistivity as low as that of bulk Cu and an excellent, void-free filling property in a 0.5-μm-wide trench. This result is because the distance between the target and wafer was longer than conventional sputtering; the plasma could be generated at low pressure (<1 mTorr); and the ECR plasma sputtering method generates a highly anisotropic particle flux of Cu. Then, a reflow process of the Cu films deposited by using an ECR plasma sputtering method was tried. The reflow phenomenon was observed and the filling property was improved; void-free filling in a 0.4-μm-wide trench was achieved. Moreover, a Cu interconnection of 0.5 μm linewidth was fabricated by a chemical mechanical polishing method without dishing, scratching, and erosion.
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