首页   按字顺浏览 期刊浏览 卷期浏览 Deep implants for semiconductor device applications
Deep implants for semiconductor device applications

 

作者: L. Frey,   S. Bogen,   M. Herden,   H. Ryssel,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1996）
卷期: Volume 140, issue 1  

页码: 87-101

 

ISSN:1042-0150

 

年代: 1996

 

DOI:10.1080/10420159608212943

 

出版商: Taylor & Francis Group

 

关键词: High energy implementation;CMOS

 

数据来源: Taylor

 

摘要:

Some applications of high energy implantation for semiconductor fabrication will be discussed. The applications include the reduction of latch-up in CMOS devices by retrograde wells, the enhancement of power devices by lifetime engineering using high energy implantation of helium or hydrogen, and the reduction of soft errors by buried recombination layers formed by high energy implantation of oxygen or carbon.

 

点击下载:  PDF (890KB)



返 回