首页   按字顺浏览 期刊浏览 卷期浏览 Synchrotron x‐ray standing‐wave study of Sb on GaAs(110) and InP(110)
Synchrotron x‐ray standing‐wave study of Sb on GaAs(110) and InP(110)

 

作者: T. Kendelewicz,   J. C. Woicik,   K. E. Miyano,   P. L. Cowan,   B. A. Karlin,   C. E. Bouldin,   P. Pianetta,   W. E. Spicer,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 4  

页码: 2290-2293

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585735

 

出版商: American Vacuum Society

 

关键词: ANTIMONY;LAYERS;GALLIUM ARSENIDES;INDIUM PHOSPHIDES;MICROSTRUCTURE;SOFT X RADIATION;STANDING WAVES;X−RAY DIFFRACTION;CHEMISORPTION;MATHEMATICAL MODELS;ULTRAHIGH VACUUM;SORPTIVE PROPERTIES;GaAs:Sb;InP:Sb

 

数据来源: AIP

 

摘要:

The soft x‐ray standing‐wave technique has been used to study ordered monolayers of Sb on GaAs(110) and InP(110). Using the back‐reflection diffraction geometry from (220) planes, we determine the perpendicular distances of Sb atoms to the substrate and compare these with theoretical calculations and elastic low‐energy electron diffraction determinations. The various models of Sb chemisorption are evaluated on the basis of our data.

 

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