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High performance very large scale integrated photomask with a silicide film

 

作者: Y. Watakabe,   S. Matsuda,   A. Shigetomi,   M. Hirosue,   T. Kato,   H. Nakata,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 4  

页码: 841-844

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583523

 

出版商: American Vacuum Society

 

关键词: MASKING;VLSI;FABRICATION;MOLYBDENUM SILICIDES;REFLECTIVITY;OPTICAL PROPERTIES;ETCHING;PERFORMANCE;QUARTZ;ADHESION;THICKNESS;SPUTTERING;SILICON;MOLYBDENUM;MoSi2

 

数据来源: AIP

 

摘要:

A molybdenum silicide (Mo‐silicide) film deposited on a quartz glass substrate offers major advantages as a high performance photomask material for very large scale integrated (VLSI) fabrication. There is no pattern missing due to exfoliation after ultrasonic cleaning with frequency of 28 kHz and 300 W of power, and after being scrubbed over 10 cycles with a high pressure water jet. Reflectivity and optical density of the Mo‐silicide film are not affected by acidic chemicals. Moreover, dry etching can be done at a rate of 50 nm/min; more than five times as fast as etching of a chromium (Cr) mask.

 

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