Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2
作者:
R. B. Iverson,
R. Reif,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 12
页码: 5169-5175
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335251
出版商: AIP
数据来源: AIP
摘要:
160‐nm polycrystalline silicon films were implanted at room temperature with 100‐keV silicon ions and subsequently annealed. The final grain size was found to increase with implant dose. A model is presented here to account for the dose dependence of the grain size. Three mechanisms were presumed to account for the final grain size: statistical variations of area coverage by the implanted ions, ion channeling, and spontaneous nucleation. Model parameters were successfully fit to the experimental data.
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