Surface solidification and impurity segregation in amorphous silicon
作者:
P. S. Peercy,
J. M. Poate,
Michael O. Thompson,
J. Y. Tsao,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 24
页码: 1651-1653
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96843
出版商: AIP
数据来源: AIP
摘要:
Real‐time measurements of the melt and solidification dynamics during pulsed laser irradiation have permitted elucidation of the processes which lead to the formation of very thin (∼2 nm) buried impurity layers in amorphous silicon. These novel structures are found to result from interfacial segregation at two moving liquid silicon‐amorphous silicon interfaces—one propagating toward the surface and the other propagating from the surface inward. The velocities of these interfaces are found to be remarkably low, ranging from 1 to 8 m/s for melts of <20 ns duration.
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