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Critical channeling angles of low energy ions in silicon

 

作者: H. Grahmann,   A. Feuerstein,   S. Kalbitzer,  

 

期刊: Radiation Effects  （Taylor Available online 1976）
卷期: Volume 29, issue 2  

页码: 117-119

 

ISSN:0033-7579

 

年代: 1976

 

DOI:10.1080/00337577608233496

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Critical channeling angles of H, He, C and Ne ions in silicon single crystals have been measured in the energy range from 15–60 keV. The results well agree with theoretical critical channeling angles in the low energy regime following a dependence of ψ ∼E−¼.

 

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