A measurement of intrinsic SiO2film stress resulting from low temperature thermal oxidation of Si
作者:
E. Kobeda,
E. A. Irene,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1986)
卷期:
Volume 4,
issue 3
页码: 720-722
ISSN:0734-211X
年代: 1986
DOI:10.1116/1.583603
出版商: American Vacuum Society
关键词: SILICON;STRESSES;STRAINS;OXIDATION;DEFORMATION;SILICA;SiO2
数据来源: AIP
摘要:
A parallel beam reflection technique has been developed in our laboratory for measuring intrinsic residual stress for Si wafers thermally oxidized at temperatures of 600–1150 °C. A detailed description of this technique is provided, and stress values calculated for thermally grown SiO2films on Si are consistent with those reported in the literature. Low temperature thermal oxidations resulted in compressive intrinsic SiO2stresses greater than 4×109dyn/cm2.
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