Electron cyclotron resonance plasma etching of silicon dioxide for deep‐submicron ultralarge scale integrations
作者:
Kazuo Nojiri,
Eri Iguchi,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 4
页码: 1451-1455
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588170
出版商: American Vacuum Society
关键词: INTEGRATED CIRCUITS;SILICON OXIDES;ETCHING;PHYSICAL RADIATION EFFECTS;PRESSURE EFFECTS;PLASMA SOURCES;ELECTRON CYCLOTRON−RESONANCE;SiO2
数据来源: AIP
摘要:
Silicon dioxide etching technology for deep‐submicron ultralarge scale integration has been developed using an electron cyclotron resonance (ECR) plasma etcher. The optimum conditions for silicon dioxide etching are obtained in terms of etch rate, geometrical controllability, and radiation damage by fully utilizing such advantages of the ECR plasma etcher as low‐pressure operation, high plasma density, and independent control of ion energy and plasma discharge. High selectivity is also found at low pressures with C4F8/CH3F. The technology has been successfully applied to the formation of 0.35 μm contact holes with an aspect ratio of 4 without a decrease in etch rate.
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