Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source
作者:
Dihu Chen,
S. P. Wong,
W. Y. Cheung,
W. Wu,
E. Z. Luo,
J. B. Xu,
I. H. Wilson,
R. W. M. Kwok,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 15
页码: 1926-1928
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121229
出版商: AIP
数据来源: AIP
摘要:
A remarkably low turn-on field of about 1 V/&mgr;m has been observed in electron field emission from planar SiC/Si heterostructures formed by high dose C implantation into Si using a metal vapor vacuum arc ion source. An implant energy of 35 keV was used to a dose of1.0×1018ions/cm2with subsequent annealing in nitrogen at 1200 °C for 2 h. X-ray photoelectron spectroscopy showed that a thin surface stoichiometric SiC layer, with a thickness of about 150 nm, had been formed. Atomic force microscopy showed that there are densely distributed small protrusions formed on the surface. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.©1998 American Institute of Physics.
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