We have computed the excess carrier lifetime for conduction band‐heavy‐hole band Auger recombination forn‐type Hg1−xCdxTe. The general theory assuming parabolic bands and a constant value for the overlap integrals has been developed by Beattie and Landsberg. We have included the effects of nonparabolic bands and have used thef‐sum rule to obtain thekdependence of the overlap integrals. Using numerical techniques we have evaluated the temperature dependence of the lifetime for severalxvalues.