Hydrogen abstraction from hydrogenated amorphous silicon surface by hydrogen atoms
作者:
Yasuji Muramatsu,
Norikuni Yabumoto,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 19
页码: 1230-1232
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97422
出版商: AIP
数据来源: AIP
摘要:
HD formation reaction was investigated in H2plasma over deuterium‐incorporating hydrogenated amorphous silicon (a‐Si:H:D). The activation energy of the reaction was determined to be 2.4±0.7 kcal mol−1, which was consistent with the abstraction reaction of hydrogen from some silane derivatives by hydrogen atoms. The HD formation reaction could be explained by the hydrogen abstraction reaction. The hydrogen abstraction froma‐Si:H surface by H atoms is thought to be one of the elementary growing processes of ana‐Si:H in a SiH4‐H2plasma.
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