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Technique for the Measurement of Short Carrier Lifetimes

 

作者: S. C. Choo,   E. L. Heasell,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1962）
卷期: Volume 33, issue 12  

页码: 1331-1334

 

ISSN:0034-6748

 

年代: 1962

 

DOI:10.1063/1.1717771

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The phase shift method for the measurement of semiconductor carrier lifetime has been extended by the use of a light beam modulated at frequencies up to 4 Mc with a Kerr cell, to provide direct measurement of lifetimes down to at least 10−8sec. Some typical results for the temperature variation of lifetime in indium antimonide are presented.

 

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