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Nanostructure fabrication in metals, insulators, and semiconductors using self‐developing metal inorganic resist

 

作者: E. Kratschmer,   M. Isaacson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 1  

页码: 361-364

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583332

 

出版商: American Vacuum Society

 

关键词: PHOTORESISTS;MASKING;LITHOGRAPHY;ALUMINIUM FLUORIDES;FABRICATION;ION COLLISIONS;ION BEAMS;SURFACE REACTIONS;SILICON FLUORIDES;ETCHING;AlF3

 

数据来源: AIP

 

摘要:

AlF3evaporated thin films of 20–80 nm thickness have been used as self‐developing positive resists and also as negative resists forming metallic Al structures. The exposure mechanism of AlF3resist has been investigated, and nanometer scale features have been fabricated in both cases at exposure doses of about 20 C/cm2and 2 C/cm2at 100 keV, respectively. Using reactive ion etching, AlF3resist patterns have been transferred into Si3N4, resulting in feature sizes as small as 20 nm.

 

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