The identification of copper in long lived GaAlAs double heterostructure lasers by means of electron probe x‐ray microanalysis
作者:
A. P. Skeats,
B. Wakefield,
M. J. Robertson,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 3
页码: 1232-1235
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332184
出版商: AIP
数据来源: AIP
摘要:
Long lived, lifetested GaAlAs/GaAs stripe geometry, double heterostructure lasers have been examined in the scanning electron microscope using a combination of cathodoluminescence, electron beam induced conductivity, and electron probe microanalysis. The dark spot arrays, occasionally seen in the cathodoluminescence images of the active layers of these devices, have been found to be caused by the diffusion of copper into the laser chip from the heat sinks, despite the presence of a nickel barrier layer on the heat sinks.
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