We have used organometallic chemical vapour deposition (OMCVD) to deposit ferroelectric PbTiO3 films on both single crystalline (001)SrTiO3 and oxidized Si substrates provided with a platinum electrode, using the precursors titanium-iso-propoxide and tetra-ethyl-lead.Epitaxial PbTiO3 layers were grown on (001)SrTiO3 at temperatures around 700°C. The epitaxial nature of the c-axis oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry including channeling, x-ray diffraction (XRD) and high-resolution electron microscopy. A minimum channeling backscatter yield of ∼ 3 % is obtained under optimal conditions.Polycrystalline PbTiO3 films have been deposited on the platinized Si substrates at temperatures between 400°C and 550°C. XRD shows that the films are of a single-phase perovskite-type structure. For a layer deposited at 400°C followed by an anneal at 700°C we measured an Ec of ∼ 100 kV/cm, an Pr of ∼ 55 μC/cm2, and a switching time < 50 ns. This latter value was limited by the instrumental set-up.