Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
作者:
Lisen Cheng,
Guoyi Zhang,
Dapeng Yu,
Ze Zhang,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 11
页码: 1408-1410
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118591
出版商: AIP
数据来源: AIP
摘要:
Predominately hexagonal GaN nucleation layers were grown on sapphire substrate by low pressure metal-organic vapor phase epitaxy. Tilt angles of GaN single crystallites about the normal of sapphire substrate are determined to be in the range from 0° to 5° by using selected area electron diffraction. A small portion of cubic phase of GaN was observed to be selectively distributed in the grain boundary areas and the instantaneous surface state is suggested to play an important role in the nucleation of the Zincblende phase. Phase transition from hexagonal to cubic GaN caused by heavy radiation from ion beam was also noticed. A critical temperature is proposed to exist in forming predominately cubic or hexagonal GaN nucleation layer. ©1997 American Institute of Physics.
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