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The potential formation ofO2−on an oxidizing porous silicon surface a source of oxygen atoms

 

作者: James L. Gole,   Frank P. Dudel,  

 

期刊: Journal of Applied Physics  （AIP Available online 1997）
卷期: Volume 82, issue 6  

页码: 3125-3128

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.366154

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Evidence is presented for the formation ofO2−on a porous silicon surface. TheO2−present on a porous silicon surface may contribute to the infrared spectrum of air oxidized surfaces in the range encompassing∼1100–1150 cm−1.The presence ofO2−suggests its possible role as a precursor for oxygen atom formation. ©1997 American Institute of Physics.

 

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