Stacked layers of self-assembled InP quantum dots embedded inGa0.52In0.48Phave been prepared by solid source molecular beam epitaxy. Thereby the distance between the dot layers has been varied from 2 to 16 nm. Cross sectional transmission electron microscopy shows that the InP dots are aligned in the growth direction [100]. As the distance between the dot layers is reduced, each dot of the first dot layer is reproduced in the upper layers, and this leads to an improvement of the dot size homogeneity of the stacked InP dot system. This is confirmed by photoluminescence (PL) measurements, which demonstrate a very narrow linewidth of 26 meV for a triple layer with 2 nm separation between the dot layers in comparison with a linewidth of 41 meV for a single layer sample. At the same time, the PL peak of the dots is shifted by 72 meV to lower energies which is ascribed to a reduced strain and strong electrical coupling between the densely stacked InP dots. ©1997 American Institute of Physics.