Enhanced crystallinity of silicon films grown from eutectic melt on aluminum sheets
作者:
Takeshi Saito,
Yasuo Seki,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 9
页码: 600-602
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.89157
出版商: AIP
数据来源: AIP
摘要:
Silicon films were grown from Al‐Si eutectic melt directly formed on aluminum sheets. High‐energy silicon atoms were deposited onto aluminum sheets at 420 °C in an argon discharge atmosphere of 5×10−4Torr using an rf ion‐plating system. A significant increase in the crystallinity of silicon films was observed from transmission electron diffraction studies. The mechanism of silicon eutectic growth on aluminum sheets is also discussed.
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