The effect of traps at the free surface of GaAs field effect transistors
作者:
Gongjiu Jin,
B. K. Jones,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 11
页码: 6340-6348
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363652
出版商: AIP
数据来源: AIP
摘要:
In a GaAs field effect transistor there are ungated sections of the channel between the gate and the source/drain. The static characteristics and the transients which occur in various parameters after a change in the bias voltages can be shown to be affected by the surface potential in this region. A model is proposed for these effects which involves a surface region with lower effective energy gap. The gate current leakage characteristics and conductance deep level transient spectroscopy measurements on single and dual gate devices are consistent with this model. ©1996 American Institute of Physics.
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