Sequential tunneling versus resonant tunneling in a double‐barrier diode
作者:
Yuming Hu,
Shawn Stapleton,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 12
页码: 8633-8636
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353395
出版商: AIP
数据来源: AIP
摘要:
The proposed sequential tunneling model predicts that the negative differential resistance in a double‐barrier diode (DBD) can exist independent of a resonant Fabry–Perot effect. The proof is based on the existence of quasi‐two‐dimensional states for electrons in the quantum well. However, we find that existence of the quasi‐two‐dimensional states depends on a Fabry–Perot resonance. Therefore, if coherence of electrons in the quantum well is completely lost, then the quasi‐two‐dimensional states will also disappear. We find that the damped Fabry–Perot model can provide a unified formula for electron transport in the DBD from pure coherent tunneling to pure incoherent tunneling. In the latter case, the negative differential resistance disappears.
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