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Sequential tunneling versus resonant tunneling in a double‐barrier diode

 

作者: Yuming Hu,   Shawn Stapleton,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 73, issue 12  

页码: 8633-8636

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.353395

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The proposed sequential tunneling model predicts that the negative differential resistance in a double‐barrier diode (DBD) can exist independent of a resonant Fabry–Perot effect. The proof is based on the existence of quasi‐two‐dimensional states for electrons in the quantum well. However, we find that existence of the quasi‐two‐dimensional states depends on a Fabry–Perot resonance. Therefore, if coherence of electrons in the quantum well is completely lost, then the quasi‐two‐dimensional states will also disappear. We find that the damped Fabry–Perot model can provide a unified formula for electron transport in the DBD from pure coherent tunneling to pure incoherent tunneling. In the latter case, the negative differential resistance disappears.

 

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