Swift heavy ion irradiation‐induced defects have been studied inn‐type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be atEc−0.22,Ec−0.275,Ec−0.29,Ec−0.32, andEc−0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200 °C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.