Using a new method based on hot‐electron generation, band‐to‐band Auger recombination inn+silicon is studied experimentally. Using the theory developed in Part I, a conservative analysis demonstrates that this Auger recombination is limited to an electron Auger coefficient smaller than 5×10−32cm6/sec which is in disagreement with some earlier studies reportingCn=2.8×10−31cm6/sec.