A new method of producing thin layers of indium antimonide is described. This consists of suddenly squashing a drop of molten indium antimonide between two optical flats and allowing it to cool.Large area, self‐supporting specimens of 10‐&mgr; thickness have been prepared in this way and their properties examined. Although these layers are polycrystalline, their electrical and optical properties are in good agreement with the single‐crystal materials from which they were obtained.