Comment on ’’Normal modes of semiconductorp‐njunction devices for material‐parameter determination’’
作者:
R. Muralidharan,
S. C. Jain,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 10
页码: 6444-6446
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328554
出版商: AIP
数据来源: AIP
摘要:
During the open circuit voltage decay (OCVD) in a diode with &tgr;B/&tgr;E≫1 (&tgr;Band &tgr;Eare the lifetimes of the minority carriers in the base and emitter, respectively), the quasistatic approximation is found to be valid in the emitter but not in the base. If the band‐gap narrowing &Dgr;Egis significant, &tgr;E,&tgr;B, as well as &Dgr;Egdetermine the OCVD fort<&tgr;B. Fort≫&tgr;B[and exp (qV/kT)≫1] OCVD vstplot is approximately linear with its slope ∼1/&tgr;B, irrespective of the magnitude of &Dgr;Eg.
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