Investigation of kinetic mechanism for the ion‐assisted etching of Si in Cl2
作者:
S. C. McNevin,
G. E. Becker,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1985)
卷期:
Volume 3,
issue 2
页码: 485-491
ISSN:0734-211X
年代: 1985
DOI:10.1116/1.583304
出版商: American Vacuum Society
关键词: ION BEAMS;ION COLLISIONS;ETCHING;SILICON;ARGON IONS;SURFACE REACTIONS;KINETICS;CHLORINE;KEV RANGE 01−10;EV RANGE 100−1000;SPUTTERING
数据来源: AIP
摘要:
This paper reports the results of a modulated ion beam study of the ion‐assisted etching of Si using Cl2gas and Ar+ions. These experiments were designed to study the kinetic mechanism of the ion‐enhanced surface reaction of Si with Cl2, which is thought to be responsible for anisotropic etching of Si in practical plasma systems. Pulses of Ar+ions (typically 12 ms long) were incident on the surface with ion fluxes ranging up to 4.5×1014ions/cm2 s and ion energies between 0.3 and 3 keV. Chlorine fluxes were varied between 2×1012and 4×1014molecules/cm2 s. Products were detected with a quadrupole mass spectrometer and a comparison of the resulting modulated signals with the cracking pattern of SiCl4under the same conditions indicated that most of the Si left the surface in the form of SiCl4. The amount of Si removed from the surface depended linearly on the incident ion and increased with increasing chlorine up to a saturation limit. The time dependence of the product signals, measured by signal averaging, is not consistent with physical sputtering. A kinetic mechanism is discussed for this reaction.
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