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Influence of positive ions on the current‐voltage characteristics of MOS structures

 

作者: A. G. Tangena,   J. Middelhoek,   N. F. de Rooij,  

 

期刊: Journal of Applied Physics  (AIP Available online 1978)
卷期: Volume 49, issue 5  

页码: 2876-2879

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.325170

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new mathematical approach for the influence of mobile positive ions on the current‐voltage characteristics of MOS structures is presented. This new method gives formulations which are more applicable than those described in the literature. Examples of the application of these formulations are presented.

 

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