Influence of positive ions on the current‐voltage characteristics of MOS structures
作者:
A. G. Tangena,
J. Middelhoek,
N. F. de Rooij,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 5
页码: 2876-2879
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325170
出版商: AIP
数据来源: AIP
摘要:
A new mathematical approach for the influence of mobile positive ions on the current‐voltage characteristics of MOS structures is presented. This new method gives formulations which are more applicable than those described in the literature. Examples of the application of these formulations are presented.
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