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Receiver sensitivities of Ga0.47In0.53As photoconductive detectors

 

作者: C. Y. Chen,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 57, issue 4  

页码: 1411-1413

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.334500

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoconductive detectors have emerged to beome an important technology for lightwave communication since the recent demonstration of a Ga0.47In0.53As detector having a receiver sensitivity better than that of a Ga0.47In0.53Asp‐i‐nphotodiode. This study shows that the receiver sensitivity of a photoconductive detector compares fairly well with that of ap‐i‐nphotodiode (CT=1.0 pF) in the multigigabit rate regime. The calculated result is within 1.4 dB of our measurement data at 1 Gb/s, &lgr;=1.3 &mgr;m for a bit error rate of 10−9. This study further illustrates that noise in an undoped GaInAs photoconductive detector/field effect transistor front end system is dominated by the detector for bit rates less than 3 Gb/s.

 

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