Interface between Y‐Ba‐Cu‐O thin film and cubic zirconia substrate
作者:
D. M. Hwang,
Q. Y. Ying,
H. S. Kwok,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2429-2431
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104863
出版商: AIP
数据来源: AIP
摘要:
The interface between laser deposited Y‐Ba‐Cu‐O thin films and yttria‐stabilized cubic zirconia substrates was studied using high‐resolution transmission electron microscopy andinsituresistivity measurements. It was found that a ∼5 nm layer of low resistivity compound was formed at the interface, at a substrate temperature of ∼650 °C. This result is qualitatively different from other substrates such as SrTiO3and MgO, where the interface compounds are high resistivity oxides. ThisinsituY‐Ba‐Cu‐O thin film is superconducting with aTcof 88 K and aJcof 2×106A/cm2at 77 K.
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