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Interface between Y‐Ba‐Cu‐O thin film and cubic zirconia substrate

 

作者: D. M. Hwang,   Q. Y. Ying,   H. S. Kwok,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 58, issue 21  

页码: 2429-2431

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104863

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The interface between laser deposited Y‐Ba‐Cu‐O thin films and yttria‐stabilized cubic zirconia substrates was studied using high‐resolution transmission electron microscopy andinsituresistivity measurements. It was found that a ∼5 nm layer of low resistivity compound was formed at the interface, at a substrate temperature of ∼650 °C. This result is qualitatively different from other substrates such as SrTiO3and MgO, where the interface compounds are high resistivity oxides. ThisinsituY‐Ba‐Cu‐O thin film is superconducting with aTcof 88 K and aJcof 2×106A/cm2at 77 K.

 

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