A simple model for delta‐doped field‐effect transistor electronic states
作者:
L. M. Gaggero‐Sager,
R. Pe´rez‐Alvarez,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 7
页码: 4566-4569
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359800
出版商: AIP
数据来源: AIP
摘要:
We propose a simple potential model which reproduces the main properties of the electronic structure of a delta‐doped field‐effect transistor. On the basis of selfconsistent calculations we conclude that the energies, wavefunctions and other characteristic properties obtained with the proposed model are very close to the results of full selfconsistent calculations. ©1995 American Institute of Physics.
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