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Reply to ``Comments on `Luminescence from electron‐irradiated silicon'''

 

作者: Colin E. Jones,   B. G. Streetman,   J. R. Noonan,  

 

期刊: Journal of Applied Physics  （AIP Available online 1974）
卷期: Volume 45, issue 10  

页码: 4655-4655

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1663108

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Recent experimental and analytical results indicate that the 0.97‐eV luminescence from irradiated Si is characterized by monoclinic symmetry. The assignment of symmetry class for other luminescence peaks in this material is incomplete.

 

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