Growth and characterization of epitaxial silicon on heteroepitaxial CaF2/Si(111) structures
作者:
S. Sinharoy,
J. Greggi,
D. N. Schmidt,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 11
页码: 6296-6300
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.342088
出版商: AIP
数据来源: AIP
摘要:
We report the epitaxial growth of silicon on a CaF2/Si(111) heteroepitaxial structure. The results show that contrary to previous reports, the room‐temperature predeposition of a very thin layer of silicon does not significantly affect the problem of calcium migration to the top surface of the silicon film, although it appears to improve the surface morphology of the film. Planar and cross‐sectional transmission electron microscope and x‐ray diffraction studies have shown that the silicon film, although single crystalline, is highly defective, the main defects being twins on both the inclined {1¯11} planes and the parallel (111) planes.
点击下载:
PDF
(774KB)
返 回