Maskless etching of GaAs and InP using a scanning microplasma
作者:
Yukinori Ochiai,
Kenji Gamo,
Susumu Namba,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1983)
卷期:
Volume 1,
issue 4
页码: 1047-1049
ISSN:0734-211X
年代: 1983
DOI:10.1116/1.582672
出版商: American Vacuum Society
关键词: etching;plasma;chemical reactions;gas flow;n−type conductors;carrier density;ion beams;focusing;masking
数据来源: AIP
摘要:
Etching characteristics of GaAs, InP, and other materials using a scanning microplasma have been investigated. This technique utilizes enhanced reaction between a reactive ambient gas and a target at an excited region like a microplasma which is produced by irradiating a scanning focused ion beam. It was observed that the present technique gives an enhanced etching rate over a physical sputter etching and a very smooth etched surface. Dependence of etching rate on bombarding angle and reactant gas flow rate is also measured.
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