The critical volume fraction of percolation in conductivity has been determined for di‐phasic Ge films. Unlike Si, two values were found, 0.15 and 0.4, corresponding respectively to low and high substrate temperatures. Furthermore, scanning electron microscopy revealed a random spherical growth for the former value as contrast to an essentially columnar growth for the latter. The higher and lower values are consistent with the theoretical limits for two‐ and three‐dimensional percolation.