The amplification of reflected bulk acoustic waves (RBW) and the convolution of two oppositely traveling incident bulk acoustic waves is analyzed. The case of a normal field degenerate convolver is considered. It is shown, on an orientation of the bismuth germanium oxide (BGO) crystal in which only one mode is excited and in which no mode conversion occurs upon reflection, that RBWs can be amplified by the drifting carriers in a semiconductor. It is also shown that convolution resulting from the mixing of two incident bulk acoustic waves can be obtained. The overall behavior of the amplified RBW and of the convolver open‐circuit voltage with the semiconductor parameters and the applied drift field and air gap is found to have some similarities to those of observed results in SAWs. A dependence of the acoustoelectric interactions on the angular distribution of the bulk wave radiation, hence the applied signal frequency, is shown. There may, however, exist some critical angles for the RBW for which no interaction exists due to the absence of an electric field in the gap. Results are presented for a BGO/Si structure and characteristics of the proposed RBW acoustoelectric devices are discussed.