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Broadband GaAs transmission photocathode

 

作者: G. A. Antypas,   J. S. Escher,   J. Edgecumbe,   R. S. Enck,  

 

期刊: Journal of Applied Physics  （AIP Available online 1978）
卷期: Volume 49, issue 7  

页码: 4301-4301

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.325322

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The operational range of the glass‐sealed negative‐electron‐affinity GaAs photocathode has been extended to 3.0 eV by increasing the Al concentration of the GaAlAs passivation layer and decreasing its thickness to approximately 0.3 &mgr;m.

 

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