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p‐type conduction in Mg‐doped Ga0.91In0.09N grown by metalorganic vapor‐phase epitaxy

 

作者: S. Yamasaki,   S. Asami,   N. Shibata,   M. Koike,   K. Manabe,   T. Tanaka,   H. Amano,   I. Akasaki,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 9  

页码: 1112-1113

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113829

 

出版商: AIP

 

数据来源: AIP

 

摘要:

p‐type conduction in InN‐containing nitrides doped with Mg has been achieved by metalorganic vapor‐phase epitaxy. The hole concentration at room temperature is as high as 7×1017cm−3. The activation energy of a Mg acceptor is estimated to be 204 meV.D–Apair emission with peak wavelength of about 405 nm is enhanced by thermal annealing. ©1995 American Institute of Physics.

 

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