Kinetics of silicon‐germanium deposition by atmospheric‐pressure chemical vapor deposition
作者:
T. I. Kamins,
D. J. Meyer,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 2
页码: 178-180
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105986
出版商: AIP
数据来源: AIP
摘要:
The deposition of Si1−xGexalloy layers in an atmospheric‐pressure, chemical vapor deposition reactor has been studied by separately examining the silicon and the germanium components of the deposition rate. The overall deposition rate increases approximately linearly with GeH4partial pressure, but is relatively independent of SiH2Cl2partial pressure. The silicon component of the deposition rate increases rapidly with increasing temperature for a constant germanium content, but the germanium component changes only slowly above about 675 °C, and is probably limited by mass transport.
点击下载:
PDF
(403KB)
返 回