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Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and Si

 

作者: Yukinori Ochiai,   Kenji Gamo,   Susumu Namba,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 1  

页码: 67-70

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583293

 

出版商: American Vacuum Society

 

关键词: ION COLLISIONS;GALLIUM ARSENIDES;SILICON;XENON FLUORIDES;ETCHING;RESOLUTION;CHLORINE;GALLIUM IONS;VAPOR PRESSURE;GaAs;Si

 

数据来源: AIP

 

摘要:

Maskless ion beam assisted etching of GaAs and Si has been investigated. Focused Ga+ion beam was irradiated on GaAs and Si in chlorine and xenon difluoride gas atmosphere, respectively. It was found that an optimum gas pressure existed to improve the etching rate. The etching rate showed a maximum at a bombarding angle of 60°–70°. The simulation of the etching profile was in reasonable agreement with the observed profiles. It was also found that redeposition effect is absent for ion beam assisted etching.

 

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