Transmission electron microscopy investigation of tin sub‐oxide nucleation upon SnO2deposition on silicon
作者:
Claude Alfonso,
Ahmed Charai¨,
Aldo Armigliato,
Dario Narducci,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 9
页码: 1207-1208
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115970
出版商: AIP
数据来源: AIP
摘要:
Transmission electron microscopy analysis of tin dioxide films grown by aerosol‐assisted chemical vapor deposition onto oxidized or etched silicon displayed the formation of a sub‐oxide phase that was identified as Sn2O3. Such a phase is observed to disappear upon heat treatment, and is believed to be one of the factors responsible for the instability of tin dioxide films used as gas sensing layers. ©1996 American Institute of Physics.
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