Electrical properties of polycrystalline GaAs films
作者:
J. J. J. Yang,
P. D. Dapkus,
R. D. Dupuis,
R. D. Yingling,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 7
页码: 3794-3800
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328117
出版商: AIP
数据来源: AIP
摘要:
Electrical properties of Se‐ and Zn‐doped polycrystalline GaAs deposited by metalorganic chemical vapor deposition on substrates of polycrystalline alumina and glass were investigated. Hall‐effect and resistivity measurements were made over a wide range of temperature (77–420 K). The electrical activation energies were found by measuring the variation of resistivity and carrier mobility of the polycrystalline GaAs films with sample temperature. The resistivity and mobility were found to be temperature activated over a wide temperature range as exp(Eb/kT) and exp(−Eb/kT), respectively, with the same activation energy applying to both properties. The results have been interpreted in terms of a modified grain boundary trapping model.
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