Nonintentionally doped metalorganic vapor‐phase epitaxy Ga1−xInxP layers, having an alloy composition (x= 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance‐voltage and deep‐ level transient spectroscopy techniques. They are found to exhibit a free‐carrier concentration at room temperature of the order of 1015cm−3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013cm−3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014–1015cm−3.