首页   按字顺浏览 期刊浏览 卷期浏览 Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double‐heterostructure bl...
Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double‐heterostructure blue‐light‐emitting diode

 

作者: Georg Mohs,   Brian Fluegel,   Harald Giessen,   Habib Tajalli,   Nasser Peyghambarian,   Pei‐Chih Chiu,   B. Scott Phillips,   Marek Osin´ski,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 11  

页码: 1515-1517

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114477

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The impurity‐related and band‐to‐band photoluminescence of a commercially available III–N blue‐light‐emitting diode is time‐resolved using femtosecond excitation and streak‐camera detection. Photoluminescence decay times are reported and stimulated band‐to‐band emission is observed. The data are compared to a simple recombination model capable of explaining the measured behavior of the photoluminescence. ©1995 American Institute of Physics.

 

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