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Structural and optical properties of high quality InAs/GaAs short‐period superlattices grown by migration‐enhanced epitaxy

 

作者: J. M. Ge´rard,   J. Y. Marzin,   B. Jusserand,   F. Glas,   J. Primot,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 1  

页码: 30-32

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101435

 

出版商: AIP

 

数据来源: AIP

 

摘要:

InAs/GaAs highly strained short‐period superlattices have been grown by migration‐enhanced epitaxy on InP(001) substrates. Such samples exhibit clearly improved structural and optical properties. X‐ray diffraction, scanning transmission electron microscopy, photoluminescence, and Raman scattering experiments have been performed to characterize an (InAs)4(GaAs)3layer.

 

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