Bottom electrode and barrier materials issues in stacked capacitor type ferroelectric memories
作者:
GerdJ. Norga,
DirkJ. Wouters,
期刊:
Integrated Ferroelectrics
(Taylor Available online 2000)
卷期:
Volume 31,
issue 1-4
页码: 205-212
ISSN:1058-4587
年代: 2000
DOI:10.1080/10584580008215654
出版商: Taylor & Francis Group
关键词: ferroelectric capacitor;diffusion barrier;orientation effects
数据来源: Taylor
摘要:
A number of basic materials issues need to be solved to successfully realize the stacked ferroelectric capacitor cell concept, which is needed for FERAM with densities beyond about 1Mb. This paper discusses barrier materials selection and the role of bottom electrode microstructure for future PZT-based FERAM based on the stacked cell concept. Conventional methods for PZT texture control, employing Pt as a template layer, are less suited for stacked cell layouts, because of the poor diffusion barrier properties of Pt. Modification of the microstructure of RuO2bottom electrodes has allowed us to eliminate the effect of underlying layers on the texture of PZT. The advantages of this approach in view of increasing circuit density of PZT-based FERAMs are discussed.
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