Antiferroelectric PbZrO3thin films have been fabricated by a multi‐ion‐beam sputtering technique at a substrate temperature as low as 415 °C. Single crystal perovskite PbZrO3films oriented along theaaxis could be epitaxially grown on (100)MgO, (100)Pt/MgO substrates using a PbTiO3buffer layer. The PbZrO3films achieved high dielectric constants of about 400, which are almost 2.4 times larger than that of bulk PbZrO3. The measurements ofD–Ehysteresis loops and Curie temperature demonstrated the antiferroelectric to ferroelectric phase transition of PbZrO3films with a thickness of 1770 A˚, while for PbZrO3films of 875 A˚ the phase transition could not be clearly observed. ©1995 American Institute of Physics.